­
­
­
­
你的邮件已经发送, 我们将很快给你回复
Mega

联系我们: +86 (0755) 8320-6606

现在打电话给我们!

Close

TOSHIBA DT系列MOSFET

Home » 产品中心

DTMOS - Super Junction Mosfet

DTMOS IV: Gen-4 Super-Junction 600-V MOSFET Series

Toshiba has developed the Gen-4 super-junction 600V and 650V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IV provides a 30% reduction in Ron*A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III.  A reduction in Ron*A leads to smaller RDSon chips in the same packages.  This helps users to improve efficiency and reduce the size of power systems.

 

DTMOS IV, Super Junction Power MOSFETs

  • Chips with optimized Rds(on)  x Qg
  • Cgd and Rg allow easy control of switching performance
  • Low C oss for optimized SPS operation also at light load (see diagram below)
  • Lower temperature impact on Rds(on) (see diagram below)
  • Best in class Rds(on) at TO-220SIS (FL): 600V, 0,065Ohm

As a result you get a high efficiently switching product at an excellent cost performance ratio.  Discover more in our DTMOS flyer (pdf 280KB)

Product Lineup

DTMOS IV 600V Standard "W" Series

DTMOS-SERIES APPLICATIONS
W–Series: Standard  type For general switching
W5-Series: With high speed body diode For bridge circuitry, like UPS or server SMPS
X-Series: High speed type For PFC circuit
DPAK IPAK D2-PAK I2-PAK DFN TO-220 TO-220SIS TO-247 TO-3P(N) TO-3P(L)
Package details DFN Package
0.9Ω TK5P60W TK5Q60W



TK5A60W


0.75Ω TK6P60W
(0.82Ω)
TK6Q60W
(0.82Ω)




TK6A60W


0.60Ω TK7P60W TK7Q60W



TK7A60W


0.50Ω TK8P60W TK8Q60W



TK8A60W


0.38Ω
TK10P60W
(0.43Ω)
TK10Q60W
(0.43Ω)


TK10V60W TK10E60W TK10A60W


0.30Ω TK12P60W
(0.34Ω)
TK12Q60W
(0.34Ω)


TK12V60W TK12E60W TK12A60W
TK12J60W
0.19Ω

TK16G60W TK16C60W TK16V60W TK16E60W TK16A60W TK16N60W TK16J60W
0.15Ω

TK20G60W TK20C60W TK20V60W
(0.17Ω)
TK20E60W TK20A60W TK20N60W TK20J60W
88mΩ



TK31V60W
(0.098mΩ)
TK31E60W TK31A60W TK31N60W TK31J60W
65mΩ






TK39A60W TK39N60W TK39J60W
40mΩ






TK62N60W TK62J60W
18mΩ








TK100L60W

DTMOS IV 600V FAST DIODE TYPE “W5”-SERIES

DPAK D2-PAK TO-220 TO-220SIS TO-3P(N) TO-247
0.67Ω TK7P60W5

TK7A60W5

0.56Ω TK8P60W5*

TK8A60W5*

0.45Ω


TK10A60W5

0.23Ω
TK16G60W5** TK16E60W5 TK16A60W5 TK16J60W5 TK16N60W5
0.0175Ω


TK20E60W5 TK20A60W5 TK20J60W5 TK20N60W5
99mΩ



TK31J60W5 TK31N60W5
74mΩ




TK39J60W5 TK39N60W5
45mΩ



TK62J60W5

* : Mass production: Q2/2014
**: Mass production: 2014

DTMOS IV 600V HIGH SPEED TYPE (LOW Qgd) “X”-SERIES

DFN TO-220 TO-220SIS TO-247
0.125Ω TK25V60X (0.13Ω)* TK25E06X* TK25A60X* TK25N60W*
88mΩ TK31V60X (98mΩ)* TK31E60X* TK31N60X
65mΩ TK39N60X
45mΩ TK62N60X M/P: Q2/14

* : Mass production: Q2/2014

Lower increase in on-resistance at high temperatures due to the use of a single epitaxial process


DTMOS Roadmap

DTMOS Roadmap: DTMOS IV offers a 30% reduction in Ron·A compared to DTMOS III

 

 

 

12% reduction in switching loss, Eoss, compared
to the predecessor (DTMOS III) owing to a reduction in Coss

 

 

 

 

Further Information

Documents