TOSHIBA DT系列MOSFET
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Toshiba Semiconductor
东芝在开发和制造分立MOSFET器件领域拥有几十年 的生产经验。东芝的主要产品包括:中高压DTMOSIV系 列(VDSS= 600V左右)、低压U-MOSⅧ-H系列(VDSS=30-250 V)
DTMOS - Super Junction Mosfet

DTMOS IV: Gen-4 Super-Junction 600-V MOSFET Series
Toshiba has developed the Gen-4 super-junction 600V and 650V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IV provides a 30% reduction in Ron*A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron*A leads to smaller RDSon chips in the same packages. This helps users to improve efficiency and reduce the size of power systems.
DTMOS IV, Super Junction Power MOSFETs
- Chips with optimized Rds(on) x Qg
- Cgd and Rg allow easy control of switching performance
- Low C oss for optimized SPS operation also at light load (see diagram below)
- Lower temperature impact on Rds(on) (see diagram below)
- Best in class Rds(on) at TO-220SIS (FL): 600V, 0,065Ohm
As a result you get a high efficiently switching product at an excellent cost performance ratio. Discover more in our DTMOS flyer (pdf 280KB)
Product Lineup
DTMOS-SERIES | APPLICATIONS | |||||||||
W–Series: Standard type | For general switching | |||||||||
W5-Series: With high speed body diode | For bridge circuitry, like UPS or server SMPS | |||||||||
X-Series: High speed type | For PFC circuit |
DPAK | IPAK | D2-PAK | I2-PAK | DFN | TO-220 | TO-220SIS | TO-247 | TO-3P(N) | TO-3P(L) | |
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0.9Ω | TK5P60W | TK5Q60W | TK5A60W | |||||||
0.75Ω | TK6P60W (0.82Ω) |
TK6Q60W (0.82Ω) |
TK6A60W | |||||||
0.60Ω | TK7P60W | TK7Q60W | TK7A60W | |||||||
0.50Ω | TK8P60W | TK8Q60W | TK8A60W | |||||||
0.38Ω |
TK10P60W (0.43Ω) |
TK10Q60W (0.43Ω) |
TK10V60W | TK10E60W | TK10A60W | |||||
0.30Ω | TK12P60W (0.34Ω) |
TK12Q60W (0.34Ω) |
TK12V60W | TK12E60W | TK12A60W | TK12J60W | ||||
0.19Ω | TK16G60W | TK16C60W | TK16V60W | TK16E60W | TK16A60W | TK16N60W | TK16J60W | |||
0.15Ω | TK20G60W | TK20C60W | TK20V60W (0.17Ω) |
TK20E60W | TK20A60W | TK20N60W | TK20J60W | |||
88mΩ | TK31V60W (0.098mΩ) |
TK31E60W | TK31A60W | TK31N60W | TK31J60W | |||||
65mΩ |
TK39A60W | TK39N60W | TK39J60W | |||||||
40mΩ | TK62N60W | TK62J60W | ||||||||
18mΩ | TK100L60W |
DTMOS IV 600V FAST DIODE TYPE “W5”-SERIES
DPAK | D2-PAK | TO-220 | TO-220SIS | TO-3P(N) | TO-247 | |
0.67Ω | TK7P60W5 | TK7A60W5 | ||||
0.56Ω | TK8P60W5* | TK8A60W5* | ||||
0.45Ω | TK10A60W5 | |||||
0.23Ω | TK16G60W5** | TK16E60W5 | TK16A60W5 | TK16J60W5 | TK16N60W5 | |
0.0175Ω |
TK20E60W5 | TK20A60W5 | TK20J60W5 | TK20N60W5 | ||
99mΩ | TK31J60W5 | TK31N60W5 | ||||
74mΩ |
TK39J60W5 | TK39N60W5 | ||||
45mΩ | TK62J60W5 |
* : Mass production: Q2/2014
**: Mass production: 2014
DTMOS IV 600V HIGH SPEED TYPE (LOW Qgd) “X”-SERIES
DFN | TO-220 | TO-220SIS | TO-247 | |
0.125Ω | TK25V60X (0.13Ω)* | TK25E06X* | TK25A60X* | TK25N60W* |
88mΩ | TK31V60X (98mΩ)* | TK31E60X* | TK31N60X | |
65mΩ | TK39N60X | |||
45mΩ | TK62N60X M/P: Q2/14 |
* : Mass production: Q2/2014
DTMOS Roadmap
12% reduction in switching loss, Eoss, compared to the predecessor (DTMOS III) owing to a reduction in Coss
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Further Information
Documents
- DTMOS Flyer (pdf 280KB)
- Bipolar Power Transistors (pdf 908KB Issued Mar 2014)
- Discrete Semiconductors, Linear ICs, Logic ICs (pdf 2056KB Issued Nov 2013)
- MOSFETs (pdf 1325KB Issued Mar 2013)
- Discrete IGBTs (pdf 875KB Issued Mar 2011)
- More Transistor documents and application notes